Works citing this work

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Work: Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

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   ABIABI:AkademIndex/openalex/2024.article.010089

2. Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

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   PreprintAdvancements in Semiconductor Devices and Circuit DesignResearch Square20240 citations

   ABIABI:AkademIndex/openalex/2024.preprint.000148