Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

Abstract

This article presents the gettering mechanism and the physical model of impurity Ni atom clusters in the Si crystal lattice. The study finds out that the formed Ni atom clusters lead to gettering various rapidly diffusing impurities, both present in the Si lattice and introduced, as well as oxygen atoms, by stimulating generation of recombination centers of thermal and radiation defects.

Identifiers

DOI

10.15407/spqeo27.03.294

Citations and references