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Works cited by this work

17 works

Work: Growth of Solid Solutions (Ge2)1−x−y(GaAs1−δBiδ)x(ZnSe)y on Silicon Sub-strates by Liquid Phase Epitaxy

  1. The The Gas-Sensitive Properties of Tin Dioxide Films

    Nuritdin Y. Yunusaliyev

    ArticleGas Sensing Nanomaterials and SensorsEast European Journal of Physics20244 citations
    ABI

  2. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

    ArticleSemiconductor materials and interfacesApplied Solar Energy20193 citations
    ABI

  3. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

    S.Z. Zaynabidinov, А. С. Саидов, Akramjon Y. Boboev +1

    ArticleSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20223 citations
    ABI

  4. GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

    D. S. Abramkin, М. О. Петрушков, М. А. Putyato +5

    Article20193 citations
    ABI

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