L. F. Lavrent'eva

Работ: 1

V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

1. Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief

   Г. А. Александрова, И. В. Ивонин, L. M. Krasil'nikova +3

   СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal1980Цитирований: 0

   ABIABI:AkademIndex/openalex/1980.article.000113