K. Lyutovich

Работ: 1

Institute of Electronics, Uzbek Academy of Sciences, 700143 Tashkent, Uzbekistan

1. Effect of alloy composition on defect formation in GexSi1−x/Si heterostructures obtained by molecular beam epitaxy

   V. I. Vdovin, M. G. Mil’vidskiĭ, T. G. Yugova +2

   СтатьяSemiconductor materials and interfacesJournal of Crystal Growth1994Цитирований: 0

   ABIABI:AkademIndex/openalex/1994.article.000037