I. V. Bodnar

Работ: 4

Minsk Radio Engineering Institute, 6, P. Brovka Str., 220600, Minsk

1. Photosensitivity of In-p-CuIn x Ga1− x Se2 structures

   I. V. Bodnar, E. P. Zaretskaya, V. Yu. Rud’ +1

   СтатьяChalcogenide Semiconductor Thin FilmsJournal of Applied Spectroscopy1994Цитирований: 0

   ABIABI:AkademIndex/openalex/1994.article.000221

2. Photoelectrical Properties of In/p-(Cu,Ag)(In,Ga) (Se,Te)<sub>2</sub> Surface-Barrier Structures

   Yu. V. Rud, V. Yu. Rud’, В. Ф. Гременок +4

   СтатьяChalcogenide Semiconductor Thin FilmsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000148

3. Photosensitive Properties of CuIn<sub>x</sub>Ga<sub>1-x</sub>Te<sub>2</sub>/n-InSe Structures

   E. P. Zaretskaya, В. Ф. Гременок, Yu. V. Rud +7

   СтатьяChalcogenide Semiconductor Thin FilmsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000194

4. Photosensitive n-Ox/p-CuIn3Se5 heterostructures

   I. V. Bodnar, A. A. Vaĭpolin, V. Yu. Rud’ +3

   СтатьяChalcogenide Semiconductor Thin FilmsJournal of Applied Spectroscopy2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000327