L. V. Borkovskaya

Работ: 2

Institute of Semiconductor Physics (Ukraine)

1. <title>Molecular-beam epitaxial growth of CdZnTe/ZnTe QW structures and superlattices on GaAs (100) substrates for optoelectronics</title>

   E. F. Venger, Yu. G. Sadof’ev, Galina N. Semenova +6

   СтатьяAdvanced Semiconductor Detectors and MaterialsProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000168

2. <title>Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE</title>

   E. F. Venger, Yu. G. Sadof’ev, Galina N. Semenova +7

   СтатьяAdvanced Semiconductor Detectors and MaterialsProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000170