V.A. Sukhoveyev

Работ: 1

1. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

   N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 2

   ABIABI:AkademIndex/openalex/2000.article.000164