E. V. Bogdanova

Работ: 1

Laboratory of Physics of Semiconducting Devices, Ioffe Institute, 194021 St. Peterburg, Russia

1. Defect formation and crystallization in a-Si:H induced by Si+ implantation

   O. A. Golikova, E. V. Bogdanova, Alexey N. Kuznetsov∥ +4

   СтатьяThin-Film Transistor TechnologiesJournal of Non-Crystalline Solids2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000285