N. V. Abrosimov

Работ: 3

Leibniz Institute for Crystal Growth D‐12489 Berlin Germany

1. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

   N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4

   СтатьяMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2017Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.326849

2. Positron probing of disordered regions in neutron‐irradiated silicon

   N.Yu. Arutyunov, Nick S. Bennett, Neil M. Wight +4

   СтатьяMuon and positron interactions and applicationsphysica status solidi (b)2016Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.572515

3. SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions

   A. M. Emel’yanov, Н. А. Соболев, T. M. Mel’nikova +1

   СтатьяSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000109