Nikolay A. Feoktistov

Работ: 1

Ioffe Physicotechnical Institute RAS

1. Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates

   Joanna Wasyluk, T. S. Perova, С. А. Кукушкін +3

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000022