A. I. Nikiforov

Работ: 1

Institute of Semiconductor Physics, Siberian Department of the Russian Academy of Sciences, Novosibirsk, Russia

1. Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method

   Х. Б. Ашуров, Flyura Djurabekova, С. Е. Максимов +3

   СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2011Цитирований: 0

   ABIABI:AkademIndex/openalex/2011.article.000307