V. Kasiyan

Работ: 1

Department of Materials Engineering, Ben-Gurion University of the Negev 2 , Beer-Sheva 84105, Israel

1. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

   Casey M. Schwarz, Anupama Yadav, M. Shatkhin +10

   СтатьяGaN-based semiconductor devices and materialsApplied Physics Letters2013Цитирований: 0

   ABIABI:AkademIndex/openalex/2013.article.000021