E. Danilova

Работ: 1

Institute of Nuclear Physics 6 , Tashkent 100214, Uzbekistan

1. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

   Casey M. Schwarz, Anupama Yadav, M. Shatkhin +10

   СтатьяGaN-based semiconductor devices and materialsApplied Physics Letters2013Цитирований: 0

   ABIABI:AkademIndex/openalex/2013.article.000021