S. A. Blokhin

Работ: 1

Ioffe Institute, Saint-Petersburg, Russia

1. Extremely high frequency Schottky diodes based on single GaN nanowires

   K Yu Shugurov, А М Можаров, Vladimir V. Fedorov +3

   СтатьяGaN-based semiconductor devices and materialsNanotechnology2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.001338