A. G. Zabrodskiĭ

Работ: 1

Ioffe Physicotechnical Institute RAS 194021 St. Petersburg Russia

1. Model of DC Tunneling Conductivity via Hydrogen‐Like Impurities in Heavily Doped Compensated Semiconductors

   N. A. Poklonski, I. I. Anikeev, С. А. Вырко +1

   СтатьяSemiconductor Quantum Structures and Devicesphysica status solidi (b)2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.002495