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Ra’no Sh. Sharipova

Работ: 5

Center of Nanotechnology Development, National University of Uzbekistan, Tashkent, Uzbekistan

  1. Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +6

    СтатьяAdvanced Memory and Neural ComputingEast European Journal of Physics2025Цитирований: 4
    ABI

  2. NDR in Co:SnO <sub>2</sub> Memristors: Nanocluster Control for Enhanced Performance

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

    СтатьяAdvanced Memory and Neural ComputingCrystal Growth & Design2025Цитирований: 2
    ABI

  3. Effect of SiO<sub>2</sub> and Post-Annealed Ga<sub>2</sub>O<sub>3</sub> Buffer Layers on Ga<sub>2</sub>O<sub>3</sub> Thin Film Growth and Properties

    Noiba U. Botirova, Azamat O. Arslanov, Gofur B. Eshonkulov +4

    СтатьяGa2O3 and related materialsCrystal Growth & Design2025Цитирований: 1
    ABI

  4. A Polling–Visualization–Reflection Approach to Teaching the Hanle Effect

    Ra’no Sh. Sharipova, Aziza Jalolova, Sh. U. Yuldashev

    СтатьяVarious Chemistry Research TopicsThe Physics Educator2026Цитирований: 0
    ABI

  5. Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

    СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2026Цитирований: 0
    ABI