V. V. Radenko

Работ: 1

TP Atomic and Subatomic Technologies, Samara, Russia

1. In Situ Mapping of Space Charge Region Activation Dynamics in SiC/Si-Based Heterostructures by KPFM/STS: Role of Interface State Recharging

   M. V. Dolgopolov, N. A. Ivliev, V. V. Radenko +3

   СтатьяSilicon Carbide Semiconductor TechnologiesPhysics of Particles and Nuclei Letters2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.011837