Anomalies in the electrical properties of thin films of bismuth–antimony alloys
Аннотация
Changes in the electrical resistivity, the magnetoresistivity coefficient, and the Hall coefficient with varying film thickness (from 400 to 12000 Å) were studied at 4.2°K on epitaxially grown Bi1−xSbx alloys with certain fixed compositions (x = 0, 0.011, 0.023, 0.035, 0.06, 0.075, 0.111, 0.142). The established relations reveal an anomalous dimensional effect which matches the anomalous changes in the electrical properties of Bi1−x Sbx alloy films described earlier in Part 1 of this report and which indicates the absence of a transition to the semiconducting state when x ≥ 0.065. It is shown that these anomalies are largely due to the boundedness of one of the specimen dimensions, and they are explained on the basis of a model which takes into account curving of the film potential at the surface. {Fiz. Nizk. Temp. 4, 1007 (1978)[Sov. J. Low Temp. Phys. 4, 474(1978)}