Статья

Investigation of Quantum States of Fast Electrons under Planar Channeling in Silicon Crystals

Vladimir I. GridnevInstitute of Nuclear Physics, Tomsk Polytechnical InstituteV. V. KaplinInstitute of Nuclear Physics, Tomsk Polytechnical InstituteV. G. KhlabutinInstitute of Nuclear Physics, Tomsk Polytechnical InstituteE. I. RozumInstitute of Nuclear Physics, Tomsk Polytechnical InstituteS.A. VorobievInstitute of Nuclear Physics, Tomsk Polytechnical Institute

physica status solidi (b)journal1987en

ABI

Аннотация

Abstract The angular distributions of (1.87 to 5.7) MeV electrons channeled in 2 μm Si crystals along (100), (110), and (111) atomic planes are measured. The half‐width of measured angular distributions is defined by a critical Lindhard angle. A relation is obtained connecting those energies of electrons at which their angular distributions are similar for various atomic planes. The effect of a “critical energy” under planar channeling of electrons is found and investigated.

Темы

Crystallography and Radiation Phenomena Advanced Electron Microscopy Techniques and Applications X-ray Diffraction in Crystallography

Идентификаторы

DOI: 10.1002/pssb.2221420106

Цитирования и источники

Цитирований: 2 Использованных источников: 8

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