V. G. Khlabutin

Работ: 4

Institute of Nuclear Physics, Tomsk Polytechnical Institute

1. Investigation of Quantum States of Fast Electrons under Planar Channeling in Silicon Crystals

   Vladimir I. Gridnev, V. V. Kaplin, V. G. Khlabutin +2

   СтатьяCrystallography and Radiation Phenomenaphysica status solidi (b)1987Цитирований: 2

   ABIABI:AkademIndex/openalex/1987.article.000013

2. Observation of similarity of angular distributions of electrons at planar channeling in silicon crystal

   Vladimir I. Gridnev, V. G. Khlabutin, E. I. Rozum +1

   СтатьяCrystallography and Radiation Phenomenaphysica status solidi (b)1987Цитирований: 0

   ABIABI:AkademIndex/openalex/1987.article.000119

3. Quantum Modulation of Electron Dechanneling

   V. G. Khlabutin, Vladimir I. Gridnev, E. I. Rozum

   СтатьяNuclear materials and radiation effectsphysica status solidi (b)1988Цитирований: 0

   ABIABI:AkademIndex/openalex/1988.article.000103

4. Volume capture of 1.5 to 5.7 MeV electrons in quantum channeling states

   V. V. Kaplin, Vladimir I. Gridnev, V. G. Khlabutin +2

   СтатьяCrystallography and Radiation Phenomenaphysica status solidi (b)1989Цитирований: 0

   ABIABI:AkademIndex/openalex/1989.article.000023