Nonlinear effects in thin Sb films
А. В. БутенкоPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovE. I. BukhshtabPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovV. Yu. KashirinPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
ABI
Аннотация
Quantum corrections to the resistance of thin Sb films are measured for various measuring currents. The magnitude of quantum corrections is found to be dependent on the Joule heating of the sample and the electron gas superheating which can be observed in disordered films due to high values of inelastic scattering time as compared to the transport relaxation time.
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