Статья

Temperature variation of the electron phase relaxation time in thin films

V. Yu. KashirinB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, KharkovYu. F. KomnikB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, Kharkov

Soviet Journal of Low Temperature Physicsjournal1992en

ABI

Аннотация

Temperature dependences of inelastic relaxation time are obtained from the values of magnetoresistance of thin Bi films (∼ 100 Å) measured in the region of realization of weak electron localization effect. The physical nature of the temperature T0 separating the regions in which either electron-electron, or electron-phonon scattering dominates is discussed.

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Темы

Quantum and electron transport phenomena Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design

Идентификаторы

DOI: 10.1063/10.0033312

Цитирования и источники

Цитирований: 0Использованных источников: 13

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