Electron–phonon scattering in thin bismuth films

Comprehensive investigations of the weak localization and interaction of electrons and the electron overheating effect in thin bismuth films (∼ 100 Å) have been carried out at helium temperatures. Temperature dependences of inelastic electron relaxation times have been obtained from the magnetic field dependences of quantum corrections to the conductivity, and the variation of these corrections due to electron overheating has been used to find the temperature dependence of the electron–phonon scattering time in the temperature range where the electron–electron interaction processes dominate in the electron kinetics.

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