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Surface layer conductivity studies in a bismuth crystal under dc skinning

В. В. АндриевскииB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, 310164, KharkovYu. F. KomnikB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, 310164, KharkovSergey RozhokB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, 310164, Kharkov
Low Temperature Physicsjournal1993en
ABI

Аннотация

The nature of magnetic field variation of the resistance of a surface layer near the trigonal face of a bismuth crystal is studied for various degrees of specular reflection of conduction electrons at the surface. Two microtips on the crystal surface, separated by a distance smaller than the bulk mean free path of electrons in zero magnetic field, were used as current and potential leads for measuring these characteristics. The specular reflection coefficient was determined by the method of electron focusing by a transverse magnetic field using for the emitter and the collector the same pair of point contacts that was used for measuring the surface layer resistance. It is established that the magnetic field dependence of the surface layer resistance is linear for both specular and diffusive reflection.

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