Low temperature phase transition(PT) and defect formation(DF) in silicon with dioxide inclusions under X-ray irradiation.

Аннотация

Studies of galvanomagnetic and electrical parameters of p-type Si:SiO{sub 2} in the temperature range 80--400 K have shown that X-ray irradiation at 80 K (Mo K{sub {alpha},{beta}} and braking radiation hv{sub max} = 50 keV) leads to various transformations of the spectrum of electron-hole states in the band gap of such material, depending on the flux density of the X-rays. Two main processes are observed: the defect (vacancy and divacancy) formation and a charge exchange of native defects localized at the Si-SiO{sub 2} interface. The charge exchange process is rather collective and stimulated one because it is in response to an X-ray-induced ferroelectric phase transition in the SiO{sub 2}-phase.

Темы

Цитирования и источники