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Работы, на которые ссылается эта работа

Работ: 23

Работа: New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

  1. Reversible conductivity changes in discharge-produced amorphous Si

    D. L. Staebler, C. R. Wroński

    Статья1977Цитирований: 9
    ABI

  2. A new semiempirical electronic structure and total energy calculation method for solids and large molecules

    Z. M. Khakimov

    СтатьяAdvanced Chemical Physics StudiesComputational Materials Science1994Цитирований: 8
    ABI

  3. Simplified LCAO Method for the Periodic Potential Problem

    J. C. Slater, G. F. Koster

    Статья1954Цитирований: 6
    ABI

  4. The electrical properties of sulphur in silicon

    S. D. Brotherton, Micháel J. King, G.J. Parker

    Статья1981Цитирований: 6
    ABI

  5. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

    M. Stutzmann, W. B. Jackson, C. C. Tsai

    Статья1985Цитирований: 5
    ABI

  6. (110) surface atomic structures of covalent and ionic semiconductors

    D. J. Chadi

    Статья1979Цитирований: 5
    ABI

  7. Negative-U Properties for Point Defects in Silicon

    G. D. Watkins, John R. Troxell

    Статья1980Цитирований: 5
    ABI

  8. Theory of the silicon vacancy: An Anderson negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>U</mml:mi></mml:math>system

    G. A. Baraff, E. O. Kane, Michael Schlüter

    Статья1980Цитирований: 5
    ABI

  9. Transferable tight-binding models for silicon

    I. Kwon, R. Biswas, C. Z. Wang +2

    Статья1994Цитирований: 4
    ABI

  10. Generating Transferable Tight-Binding Parameters: Application to Silicon

    L. Goodwin, A Skinner, D. G. Pettifor

    Статья1989Цитирований: 4
    ABI

  11. Microscopic Theory of Atomic Diffusion Mechanisms in Silicon

    Roberto Car, Paul J. Kelly, Atsushi Oshiyama +1

    Статья1984Цитирований: 3
    ABI

  12. Barrier to Migration of the Silicon Self-Interstitial

    Yaneer Bar-Yam, John D. Joannopoulos

    Статья1984Цитирований: 3
    ABI

  13. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair

    G. D. Watkins

    Статья1967Цитирований: 3
    ABI

  14. High-resolution studies of sulfur- and selenium-related donor centers in silicon

    Erik Janzén, R. Stedman, G. Grossmann +1

    Статья1984Цитирований: 3
    ABI

  15. Computer Modelling of Electronic and Atomic Processes in Solids

    Книга1997Цитирований: 2
    ABI

  16. Ion-solid interactions for materials modification and processing

    D. B. Poker, D. Ila, Yaxiong Cheng +2

    Статья1996Цитирований: 2
    ABI

  17. Theory of Enhanced Migration of Interstitial Aluminum in Silicon

    G. A. Baraff, M. Schlüter, G. Allan

    Статья1983Цитирований: 2
    ABI

  18. DEFECT METASTABILITY IN HYDROGEN PASSIVATED POLYCRYSTALLINE SILICON

    N. H. Nickel, W. B. Jackson, N. M. Johnson

    Статья1994Цитирований: 2
    ABI

  19. DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL

    David Redfield

    Статья1991Цитирований: 2
    ABI

  20. Role of hydrogen complexes in the metastability of hydrogenated amorphous silicon

    W. B. Jackson

    Статья1990Цитирований: 2
    ABI

  21. Molecular-dynamics study of defect formation in<i>a</i>-Si:H

    Young K. Park, Charles W. Myles

    Статья1995Цитирований: 2
    ABI

  22. Ab initio pseudopotential calculations of point defects and boron impurity in silicon

    Jing Zhu, Lin Yang, C. Mailhiot +2

    Статья1995Цитирований: 2
    ABI

  23. <i>Ab initio</i>calculations on metastable defects in a-Si:H: The Staebler-Wronski effect

    R. Jones, G M S Lister

    Статья1990Цитирований: 2
    ABI