Picosecond semiconductor lasers with a multisection saturable absorber, fabricated by heavy ion implantation

A method of implanting high-energy heavy ions across the emitter layer of a semiconductor laser has been developed to create distributed regions of ultrafast saturable absorber integrated into the cavity of a quantum-well laser. This method was used to fabricate picosecond laser diodes having high average powers and to demonstrate colliding-pulse mode-locking of a diode laser with a multisection saturable absorber.

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