Uniform acceptor distribution in neutron-transmutation-doped far-infrared p-Ge lasers
E. W. NelsonUniv. of Central Florida (United States)M. V. DolguikhUniv. of Central Florida (United States)Elena FlitsiyanUniv. of Central Florida (United States)A. V. MuravjovUniv. of Central Florida (United States)R. E. PealeUniv. of Central Florida (United States)S. H. KleckleyW.G. VernetsonUniv. of Florida (United States)V. Z. TsipinUzbekistan Academy of Science (Uzbekistan)
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEjournal2003en
ABI
Аннотация
A neutron transmutation doped (NTD) far-infrared p-Ge laser crystal and a melt-grown p-Ge laser are analyzed and compared. Though the doping level in the NTD active crystal is twice lower than optimal, the laser performance is comparable to that produced from high-quality melt-grown crystals because of superior dopant uniformity. Compensation was examined by comparing results of neutron activation analysis with majority carrier concentration. Study of impurity breakdown electric field reveals better crystal quality in NTD. The current saturation behavior confirms the expected higher doping uniformity over melt grown laser rods.
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