Статья

Effect of Interlayer Exchange Coupling on the Curie Temperature in Ga1-xMnxAs Trilayer Structures

Sh. U. YuldashevAcademy of Sciences of the Republic of Uzbekistan; Dongguk UniversityYongmin KimDongguk UniversityNayoung KimDongguk UniversityHyunsik ImDongguk UniversityTae Won KangDongguk UniversitySang‐Hoon LeeDepartment of Physics, Korea University, Seoul 136–701, KoreaYuji C. SasakiDepartment of Physics, University of Notre Dame Notre Dame, Indiana 46556, USAX. LiuDepartment of Physics, University of Notre Dame Notre Dame, Indiana 46556, USAJ. K. FurdynaDepartment of Physics, University of Notre Dame Notre Dame, Indiana 46556, USA

2003en

ABI

Аннотация

We have investigated the effect of interlayer exchange coupling on the Curie temperature of ferromagnetic (FM) layers in Ga1-xMnxAs(Be)/GaAs/Ga1-xMnxAs trilayer structures. The FM layers in the trilayers contained the same concentration of Mn (x≈0.046), but the top ferromagnetic layer was additionally doped with Be. For this x the Curie temperature observed on a control single-layer sample of Be-doped Ga0.954Mn0.046As is lower than that of an undoped sample. However, in the case of trilayers, we observed that the Curie temperature of the Ga0.954Mn0.046As(Be) layer increased with decreasing thickness of the GaAs spacer separating the two FM layers. This increase in Curie temperature is due to the exchange coupling between the ferromagnetic layers mediated by the spin-polarized free carriers (holes) through the thin insulating spacer.

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Темы

Magnetic properties of thin films ZnO doping and properties Semiconductor Quantum Structures and Devices

Идентификаторы

DOI: 10.7567/ssdm.2003.e-4-2

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