Investigation of Zn diffusion into InP which preliminary thermal treated in nitrogen atmosphere
M. AkhmedovaPhysical-Technical Institute of Academy of Sciences, UzbekistanА. В. СмирновPhysical-Technical Institute of Academy of Sciences, Uzbekistan
2005en
ABI
Аннотация
Preliminary thermal treatment of InP in nitrogen atmosphere before Zn diffusion process creates thin protective layer on the surface of semiconductor, which prevent evaporation of P and by this it reduces degradation of surface layer.
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