Статья

p-n junctions obtained in (Ge2)x(GaAs)1–x varizone solid solutions by liquid phase epitaxy

Б. СапаевPhysical and Technical Institute of Uzbek Academy of Sciences, 2b, G. Mavlanov str.,700084 Tashkent, Republic of Uzbekistan

Semiconductor Physics Quantum Electronics & Optoelectronicsjournal2005en

ABI

Аннотация

Fig. 1. Scheme of the cascade solar cell based on (Ge 2 ) x (GaAs) 1-x graded gap structure: 1 -n-GaAs-substrate, 2 -variable gap solid solution n-(Ge 2 ) x (GaAs), 3 -p-(Ge 2 ) x (GaAs) 1-x .

Темы

Semiconductor materials and interfaces Phase-change materials and chalcogenides Silicon Nanostructures and Photoluminescence

Идентификаторы

DOI: 10.15407/spqeo8.04.033

Цитирования и источники

Цитирований: 0Использованных источников: 2

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