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Работы, на которые ссылается эта работа
Работ: 25
Работа: Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
T. Dietl, Hideo Ohno, F. Matsukura +2
Статья2000Цитирований: 16ABISpin disorder scattering mechanism of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates
Im Taek Yoon, Tae Won Kang, K. H. Kim +1
Статья2004Цитирований: 7ABIHole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
T. Dietl, Hideo Ohno, F. Matsukura
Статья2001Цитирований: 6ABIEffect of the location of Mn sites in ferromagnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>on its Curie temperature
K. M. Yu, W. Walukiewicz, T. Wójtowicz +4
Статья2002Цитирований: 5ABIOptical characterisation of MOVPE-grown Ga1−Mn As semimagnetic semiconductor layers
Th. Hartmann, M. Lampalzer, W. Stolz +4
Статья2000Цитирований: 4ABILow-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As
Aidong Shen, F. Matsukura, Shiping Guo +5
Статья1999Цитирований: 4ABIPhoto-induced anomalous Hall effect in GaAs:MnAs granular films
Tomoyuki Ogawa, Yusuke Shuto, Kazuhiko Ueda +1
Статья2004Цитирований: 3ABI(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy
Takashi Hayashi, Masaaki Tanaka, Tatau Nishinaga +3
Статья1997Цитирований: 3ABIOptimization of GaMnAs growth in low temperature molecular beam epitaxy
Kyung-Hyun Kim, Jong-Hoon Park, Byung-Doo Kim +4
Статья2002Цитирований: 3ABIHybrid ferromagnetic/semiconductor heterostructures for spintronics
Nitin Samarth, Seung‐Hyun Chun, K. C. Ku +2
Статья2003Цитирований: 3ABIEnhanced positive magnetoresistance effect in GaAs with nanoscale magnetic clusters
Sh. U. Yuldashev, Yoon Shon, Yongchai Kwon +5
Статья2001Цитирований: 3ABISpin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited)
Hideo Ohno, F. Matsukura, T. Omiya +1
Статья1999Цитирований: 3ABIOptical transitions of liquid phase epitaxy grown (Ga,Mn)As in magnetic fields
Статья2003Цитирований: 3ABIInfluence of manganese contamination on high-mobility GaAs∕AlGaAs heterostructures
K. Wagenhuber, H.-P. Tranitz, M. Reinwald +1
Статья2004Цитирований: 3ABIInfluence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures
K. Wagenhuber, H. -p. Tranitz, M. Reinwald +1
Статья2004Цитирований: 3ABIInterplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>
A. Van Esch, L. Van Bockstal, J. De Boeck +7
Статья1997Цитирований: 2ABI