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Energetically competitive growth patterns of silicon clusters: Quasi-one-dimensional clusters versus diamond-like clusters

Polina TereshchukInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent 702132, UzbekistanZ. M. KhakimovInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent 702132, UzbekistanF. T. UmarovaInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent 702132, UzbekistanMark T. SwihartInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent 702132, Uzbekistan
Physical Review Bjournal2007en
ABI

Аннотация

Silicon clusters with a diamond-like core and energetically competitive non-diamond clusters were studied using the nonconventional tight-binding molecular dynamics simulation method. Non-diamond clusters were constructed according to a quasi-one-dimensional pentagon-based regular growth pattern. A nontrivial competition between surface and core reconstructions in the clusters, in order to reach energetically favorable atomic arrangements, was observed. This prevents unlimited growth via the one-dimensional pattern. Starting from ${\mathrm{Si}}_{43}$, there was substantial deviation from the stacked pentagon motif, and for ${\mathrm{Si}}_{61}$, one end of these clusters became almost two-dimensional. Clusters with a diamond-like core were subjected to substantial reconstruction. These were energetically unfavorable relative to non-diamond clusters for the sizes considered ($\ensuremath{\leqslant}71$ atoms). The importance of capped pentagon motifs in the surface reconstruction for energetically competitive nanometer-size diamond-like clusters was demonstrated. A lower bound of 115 atoms for the transition from non-diamond structure to diamond-like structure is estimated by extrapolation of the present results.

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