Influence of temperature on photocurrent of amorphous semiconductor-based solar element

We have derived an expression for the temperature dependence of the short circuit current density of an amorphous hydrogenated silicon-based solar element (SE), using the experimental results The SE short circuit current density variations at low and high temperatures were studied. It was investigated how this parameter is associated with the potential barrier height and the value of the non-ideality (quality) factor in the solar element volt-ampere characteristics (VAC).

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