Статья

Approximate evaluation of operating conditions and effectiveness of solar impurity thermovoltaic element

М. С. СаидовInstitute of Materials Sciences, “Fizika-Solntse” NPO, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan

Applied Solar Energyjournal2009en

ABI

Аннотация

The effectiveness of solar impurity thermovoltaic elements based on semiconductors with forbidden gap width 0.3 eV with thin highly doped p- and n-layers with concentration ∼5 × 1019 cm−3, containing in addition a deep impurity with concentration ∼4 × 1018 cm−3 and ionization energy 0.15 eV, is shown to reach 30–40% with solar radiation intensity 0.1 W/cm2.

Темы

Chalcogenide Semiconductor Thin Films nanoparticles nucleation surface interactions Semiconductor Quantum Structures and Devices

Идентификаторы

DOI: 10.3103/s0003701x09020017

Цитирования и источники

Цитирований: 0Использованных источников: 3

Показатели — AkademScholar · Скоро