Photovoltaic device on a single ZnO nanowire p–n homojunction
Hak Dong ChoQuantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 100-715, KoreaAnvar ZakirovDepartment of Thermophysics, Academy of Sciences, Tashkent 700135, UzbekistanSh. U. YuldashevDepartment of Thermophysics, Academy of Sciences, Tashkent 700135, UzbekistanChi Won AhnNano-materials Laboratory, National Nanofab Center at KAIST, 335 Gwahangno, Daejeon 305-806, KoreaY. K. YeoDepartment of Engineering Physics, Air Force Institute of Technology, Wright-Patterson AFB, OH 45433, USATae Won KangQuantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 100-715, Korea
ABI
Аннотация
A photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices.
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