Работы, на которые ссылается эта работа

Работ: 5

Работа: Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

   Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

   Статья2011Цитирований: 11

   ABIABI:AkademIndex/openalex/2026.other.386765

2. Short-channel effects in SOI MOSFETs

   S. Veeraraghavan, J.G. Fossum

   Статья1989Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.390677

3. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   СтатьяAdvancements in Semiconductor Devices and Circuit Design2014Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.386764

4. Statistical variability and reliability in nanoscale FinFETs

   Xingsheng Wang, A. R. Brown, B. Cheng +1

   Статья2011Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.390676

5. Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

   Asen Asenov, Savaş Kaya, A. R. Brown

   Статья2003Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.390678