Работы, цитирующие эту работу

Работ: 5

Работа: To the Theory of Electron Passage in a Semiconductor Structure Consisting of Alternating Asymmetric Rectangular Potential Wells and Barriers

1. Theory of Electron Transport in Two-Barrier Five-Layer Semiconductor Structures

   Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Makhliyo A. Mamatova +2

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.003815

2. Theory of Linear-Circular Dichroism in Monoatomic Layers of Transition Metal Dichalcogenides Taking into Account the Rabi Effect

   Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Mardonbek Kh. Nasirov +2

   Статья2D Materials and ApplicationsEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.003817

3. Sub-barrier and Above-barrier Electron Transport Through Multilayer Semiconductors

   Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, Iqboljon Mamirjonovich Eshboltayev +1

   СтатьяQuantum and electron transport phenomenaAmerican Journal of Physics and Applications2020Цитирований: 0

   ABIABI:AkademIndex/openalex/2020.article.003198

4. ELECTRONIC PROPERTIES OF A SEMICONDUCTOR TWO-BARRIER STRUCTURE

   Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, Mamatova Mahliyo Adhamovna +1

   СтатьяAdvanced Physical and Chemical Molecular InteractionsEPRA International Journal of Multidisciplinary Research (IJMR)2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.005149

5. Theory of size quantization in monolayers of transition metal dichalcogenides

   Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, Mardonbek Kh. Nasirov +2

   Статья2D Materials and ApplicationsPhysica Scripta2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.002867