Статья

DEVELOPMENT OF SILICON DIFFUSION n-p-DETECTORS OF IONIZING RADIATION

S. A. RadzhapovPhysical-technical Institute, SPA «Physics-Sun», Academy of Sciencesof the Republic of UzbekistanRustam Khakimovich RakhimovInstitute of Materials Science «Physics-Sun», Uzbekistan Academy of SciencesБ. С. РаджаповPhysical-technical Institute, SPA «Physics-Sun», Academy of Sciencesof the Republic of UzbekistanM. A. ZufarovPhysical-technical Institute, SPA «Physics-Sun», Academy of Sciencesof the Republic of UzbekistanKutbiddin Ilovitddinovich VakhobovTashkent Technical University

Computational nanotechnologyjournal2019en

ABI

Аннотация

The paper presents an optimized manufacturing technology of silicon diffusion n-p detectors, as well as some research data on the spectrometric characteristics of silicon diffusion detectors of charged particles.

Темы

Radiation Detection and Scintillator Technologies Graphite, nuclear technology, radiation studies Particle Detector Development and Performance

Идентификаторы

DOI: 10.33693/2313-223x-2019-6-3-112-115

Цитирования и источники

Цитирований: 2 Использованных источников: 1

Показатели — AkademScholar · Скоро