Research of Spectral Characteristics of a Thin-Film Structure with a Metal-Semiconductor Barrier
A. V. KarimovPhysics-Technical Institute Scientific and Production Association “Physics – Sun” of the Academy of Sciences of the Republic of Uzbekistan. 100084, Tashkent, Chingiz Aitmatov st. -2BD. M. YodgorovaPhysics-Technical Institute Scientific and Production Association “Physics – Sun” of the Academy of Sciences of the Republic of Uzbekistan. 100084, Tashkent, Chingiz Aitmatov st. -2BF. A. GiyasovaPhysics-Technical Institute Scientific and Production Association “Physics – Sun” of the Academy of Sciences of the Republic of Uzbekistan. 100084, Tashkent, Chingiz Aitmatov st. -2B
ABI
Аннотация
The paper presents photosensitive sandwich-structured Au-vGaAs: O-nCdS-nInP- Au-semiconductor formed by vacuum deposition of thin films of cadmium sulfide and indium phosphide on a single-crystal substrate of gallium arsenide.
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