Development of High-Efficiency Silicon Detectors and Electronic Components for a Radiometer of Alpha Radiation

The results of the development of the technology for the production of large surface-barrier semiconductor detectors and Al–αGe–pSi–Au heterojunction detectors (with diameters of 30–100 mm), as well as some data on the study of their electrophysical and radiometric characteristics, are presented. The block diagram of a radiometer of alpha radiation, the diagram of a microcontroller unit, and the operation of electronic components are described. The characteristics of a radon radiometer manufactured on the basis of these detectors and the data of monitoring the radon concentration in the subsoil layer and air are presented as well. The monitoring results demonstrated that the concentration varies depending on the temperature, humidity, and time of day. This device can be used under field and stationary testing conditions.

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