Semiconductor solid solutions Ge<sub>1-x</sub> Sn<sub>x</sub> as a new material for electronics
Аннотация
Monocrystal films of the Ge <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> Sn <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> solid solution (0<x<0.03) were grown on Ge substrates by the method of liquid phase epitaxy from a limited volume of tin melt solution. The surface relief of the epitaxial film, as well as the spectral photosensitivity of the n-Ge-p-Ge <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> Sn <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> heterostructures (0<x<0.03) are investigated. Hillocks of nanocrystals from the Ge <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> Sn <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> solid solution with a base size of 150 to 400 nm and a height of 5 to 20 nm are formed on the film surface. The spectral photosensitivity of n-Ge-p-Ge <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> Sn <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> heterostructures (0<x<0.03) covers the photon energy range from 0.4 to 1.4 eV.
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