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Работы, на которые ссылается эта работа
Работ: 44
Работа: Optically Reconfigurable Complementary Logic Gates Enabled by Bipolar Photoresponse in Gallium Selenide Memtransistor
Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
Ruijing Ge, Xiaohan Wu, Myungsoo Kim +6
Статья2017Цитирований: 5ABIRobust Ag/ZrO<sub>2</sub>/WS<sub>2</sub>/Pt Memristor for Neuromorphic Computing
Xiaobing Yan, Cuiya Qin, Chao Lü +14
Статья2019Цитирований: 4ABIHighly sensitive visible to infrared MoTe<sub>2</sub>photodetectors enhanced by the photogating effect
Hai Huang, Jianlu Wang, Weida Hu +13
Статья2016Цитирований: 3ABIRobust memristors based on layered two-dimensional materials
Miao Wang, Songhua Cai, Chen Pan +11
Статья2018Цитирований: 3ABIExploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control
Mengqi Zeng, Yao Xiao, Jinxin Liu +2
Обзорная статья2018Цитирований: 3ABIMulti-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
Vinod K. Sangwan, Hong‐Sub Lee, Hadallia Bergeron +4
Статья2018Цитирований: 3ABINormally-off Logic Based on Resistive Switches—Part I: Logic Gates
Simone Balatti, Stefano Ambrogio, Daniele Ielmini
Статья2015Цитирований: 2ABIGate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
Vinod K. Sangwan, Deep Jariwala, In S. Kim +4
Статья2015Цитирований: 2ABIPower-Efficient Gas-Sensing and Synaptic Diodes Based on Lateral Pentacene/a-IGZO PN Junctions
Yingli Chu, Haotian Tan, Chenyang Zhao +2
Статья2022Цитирований: 2ABI