Influence of Neutron Irradiation on the Generation of Charge Carriers in Heated Silicon-Germanium Film Structures for Thermal Energy Converters
B. M. AbdurakhmanovArifov Institute of ion plasma and laser technologies, Academy of Sciences of the Republic of Uzbekistan, DurmonYuli str., 33, 100125, Tashkent, UzbekistanM. M. AdilovArifov Institute of ion plasma and laser technologies, Academy of Sciences of the Republic of Uzbekistan, DurmonYuli str., 33, 100125, Tashkent, UzbekistanSherzodbek KuchkanovArifov Institute of ion plasma and laser technologies, Academy of Sciences of the Republic of Uzbekistan, DurmonYuli str., 33, 100125, Tashkent, UzbekistanSergei MaksimovArifov Institute of ion plasma and laser technologies, Academy of Sciences of the Republic of Uzbekistan, DurmonYuli str., 33, 100125, Tashkent, UzbekistanSherzod MakhmudovInstitute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Ulugbek village, Khuroson street, 1, 100214, Tashkent, UzbekistanA. S. DoroshkevichDonetsk Institute for Physics and Engineering named after O.O. Galkin, Kiev, UkraineZhanna V. MezentsevaJoint Institute for Nuclear Research, Dubna, RussiaAlisa A. TatarinovaJoint Institute for Nuclear Research, Dubna, RussiaSergiy LyubchykDeep Tech Lab, Faculty of Engineering, Lusfona University, Lisbon, 1749-024, PortugalAndriy LyubchykDeep Tech Lab, Faculty of Engineering, Lusfona University, Lisbon, 1749-024, PortugalDan ChiceaResearch Center for Complex Physical Systems, Faculty of Sciences, "Lucian Blaga" University of Sibiu, Dr. Ion Ratiu str. no. 5-7, 550012 Sibiu, RomaniaM.N. MirzayevInstitute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, Z1143 AzerbaijanХ. Б. АшуровArifov Institute of ion plasma and laser technologies, Academy of Sciences of the Republic of Uzbekistan, DurmonYuli str., 33, 100125, Tashkent, Uzbekistan
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Аннотация
The effect of neutron irradiation of Si-Ge/Si film structures obtained by gas-phase epitaxy on the processes of charge carrier generation and the magnitude of the dark short-circuit current and open-circuit voltage caused by it is studied, it is shown that their magnitude practically does not change with time. The results obtained indicate that all types of structural defects, both associated with dopant impurities and radiation exposure, contribute to the generation of charge carriers in heated silicon structures with the participation of deep energy levels, which indicates the applicability of neutron processing of silicon materials to create thermal energy converters, operating at high temperatures.
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