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Revealing Bipolar Photoresponse in Multiheterostructured WTe<sub>2</sub>–GaTe/ReSe<sub>2</sub>–WTe<sub>2</sub> P–N Diode by Hybrid 2D Contact Engineering

Ehsan ElahiDepartment of Inorganic Chemistry, University of Chemistry and Technology Prague Technická 5, Prague 616628, Czech RepublicMuhammad RabeelDepartment of Electrical Engineering, Sejong University, Seoul 05006, South KoreaBilal AhmedDepartment of Biomedical Engineering, Keimyung University, Daegu 42601, Republic of KoreaJamal AzizChair of Smart Sensor Systems, University of Wuppertal, Wuppertal 42119, GermanyMuhammad SulemanDepartment of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, South KoreaMuhammad Asghar KhanDepartment of Electrical Engineering, Sejong University, Seoul 05006, South KoreaShania RehmanDepartment of Semiconductor System Engineering, Sejong University Seoul, 05006, South KoreaArslan RehmatDepartment of Physics & Astronomy, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006 South KoreaMuhammad AsimDepartment of Physics & Astronomy, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006 South KoreaMalik Abdul RehmanDepartment of Chemical Engineering, New Uzbekistan University, Tashkent 100007, UzbekistanAhmad A. IfseisiDepartment of Chemistry, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi ArabiaMohamed E. AssalDepartment of Chemistry, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi ArabiaMuhammad Farooq KhanDepartment of Electrical Engineering, Sejong University, Seoul 05006, South KoreaSungho KimDivision of Electronic & Semiconductor Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
ACS Applied Materials & Interfacesjournal2024en
ABI

Аннотация

The van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been thoroughly investigated with regard to practical applications. Recent studies on 2D materials have reignited attraction in the p–n junction, with promising potential for applications in both electronics and optoelectronics. 2D materials provide exceptional band structural diversity in p–n junction devices, which is rare in regular bulk semiconductors. In this article, we demonstrate a p–n diode based on multiheterostructure configuration, WTe2–GaTe-ReSe2–WTe2, where WTe2 acts as heterocontact with GaTe/ReSe2 junction. Our devices with heterocontacts of WTe2 showed excellent performance in electronic and optoelectronic characteristics as compared to contacts with basic metal electrodes. However, the highest rectification ratio was achieved up to ∼2.09 × 106 with the lowest ideality factor of ∼1.23. Moreover, the maximum change in photocurrent (Iph) is measured around 312 nA at Vds = 0.5 V. The device showed a high responsivity (R) of 4.7 × 104 m·AW–1, maximum external quantum efficiency (EQE) of 2.49 × 104 (%), and detectivity (D*) of 2.1 × 1011 Jones at wavelength λ = 220 nm. Further, we revealed the bipolar photoresponse mechanisms in WTe2–GaTe-ReSe2–WTe2 devices due to band alignment at the interface, which can be modified by applying different gate voltages. Hence, our promising results render heterocontact engineering of the GaTe–ReSe2 heterostructured diode as an excellent candidate for next-generation optoelectronic logic and neuromorphic computing.

Темы

2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications

Идентификаторы

DOI
10.1021/acsami.4c08166

Цитирования и источники

Цитирований: 1Использованных источников: 57
Показатели — AkademScholar · Скоро