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Работы, на которые ссылается эта работа

Работ: 57

Работа: Revealing Bipolar Photoresponse in Multiheterostructured WTe<sub>2</sub>–GaTe/ReSe<sub>2</sub>–WTe<sub>2</sub> P–N Diode by Hybrid 2D Contact Engineering

  1. The rise of graphene

    A. K. Geǐm, Kostya S. Novoselov

    Статья2007Цитирований: 28
    ABI

  2. Two-dimensional atomic crystals

    Kostya S. Novoselov, Da Jiang, F. Schedin +4

    Статья2005Цитирований: 9
    ABI

  3. Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions

    Muhammad Farooq Khan, Ehsan Elahi, Najam Ul Hassan +8

    СтатьяGraphene research and applicationsACS Applied Electronic Materials2023Цитирований: 6
    ABI

  4. Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe<sub>2</sub>/Gr heterojunction

    Ehsan Elahi, Muhammad Farooq Khan, Shania Rehman +9

    Статья2020Цитирований: 4
    ABI

  5. Innovations in self-powered nano-photonics of emerging and flexible two-dimensional materials

    Muhammad Abubakr, Ehsan Elahi, Shania Rehman +10

    Статья2D Materials and ApplicationsMaterials Today Physics2023Цитирований: 3
    ABI

  6. Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping

    Muhammad Waqas Iqbal, Aliya Amin, Muhammad Arshad Kamran +7

    Статья2019Цитирований: 3
    ABI

  7. Highly sensitive visible to infrared MoTe<sub>2</sub>photodetectors enhanced by the photogating effect

    Hai Huang, Jianlu Wang, Weida Hu +13

    Статья2016Цитирований: 3
    ABI

  8. Self-Assembled Monolayer Doping for MoTe<sub>2</sub> Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

    Dong Hyun Lee, Muhammad Rabeel, Young-Min Han +4

    Статья2023Цитирований: 3
    ABI

  9. Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire

    Hehai Fang, Weida Hu, Peng Wang +14

    Статья2016Цитирований: 3
    ABI

  10. Formation of an MoTe<sub>2</sub> based Schottky junction employing ultra-low and high resistive metal contacts

    Sikandar Aftab, Muhammad Waqas Iqbal, Amir Muhammad Afzal +4

    Статья2019Цитирований: 3
    ABI

  11. The role of 2-Dimensional materials for electronic devices

    Priya Kaushal, Gargi Khanna

    Статья2022Цитирований: 2
    ABI

  12. Optical modulators with 2D layered materials

    Zhipei Sun, A. Martinez, Feng Wang

    Статья2016Цитирований: 2
    ABI

  13. Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction

    Nengjie Huo, Gerasimos Konstantatos

    Статья2017Цитирований: 2
    ABI

  14. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

    Frank H. L. Koppens, Thomas Mueller, Phaedon Avouris +3

    Обзорная статья2014Цитирований: 2
    ABI

  15. Electronics based on two-dimensional materials

    Gianluca Fiori, Francesco Bonaccorso, Giuseppe Iannaccone +5

    Статья2014Цитирований: 2
    ABI

  16. Arrayed Van Der Waals Broadband Detectors for Dual‐Band Detection

    Peng Wang, Shanshan Liu, Wenjin Luo +12

    Статья2017Цитирований: 2
    ABI

  17. Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe<sub>2</sub>/Graphene/SnS<sub>2</sub> p–g–n Junctions

    Alei Li, Qianxue Chen, Peipei Wang +8

    Статья2018Цитирований: 2
    ABI

  18. Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit

    Seunguk Song, Yeoseon Sim, Se‐Yang Kim +13

    Статья2020Цитирований: 2
    ABI

  19. Transistors based on two-dimensional materials for future integrated circuits

    Saptarshi Das, Amritanand Sebastian, Eric Pop +15

    Статья2021Цитирований: 2
    ABI

  20. Contacts in 2D

    S Das, P.-C Shen, G Kwon

    Статья2022Цитирований: 2
    ABI

  21. Wafer-scale and universal van der Waals metal semiconductor contact

    Lingan Kong, Ruixia Wu, Yang Chen +20

    Статья2023Цитирований: 2
    ABI

  22. Без названия

    ДругоеЦитирований: 1
    ABI

  23. Без названия

    ДругоеЦитирований: 1
    ABI

  24. Без названия

    ДругоеЦитирований: 1
    ABI

  25. Без названия

    ДругоеЦитирований: 1
    ABI