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Работ: 46
Работа: Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies
Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3
A. S. Goossens, A. Das, T. Banerjee
Статья2018Цитирований: 2ABIEnhanced magnetic modulation in HfO2-based resistive memory with an Hf top electrode
Jiajun Guo, Xin Kang, Yingjie Gao +2
Статья2018Цитирований: 2ABIA multi-level memristor based on atomic layer deposition of iron oxide
Samuele Porro, Katarzyna Bejtka, Alladin Jasmin +5
Статья2018Цитирований: 2ABIEnhanced stability of filament-type resistive switching by interface engineering
Статья2017Цитирований: 2ABIA resistive switching memory device with a negative differential resistance at room temperature
Mayameen S. Kadhim, Feng Yang, Bai Sun +6
Статья2018Цитирований: 2ABI