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Study of Optical, Electrophotographic and Holographic Parameters of As-Se Condensates from the Prehistory of the Original Bulk Materials

Sharifa B. UtamuradovaInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, UzbekistanZ. T. AzamatovInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, UzbekistanA I PopovInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, UzbekistanMira Ruzimovna BekchanovaInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, UzbekistanMurodjon A. YuldoshevUniversity of business and science, Namangan, UzbekistanAbror B. BakhromovInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, Uzbekistan
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Аннотация

The results of a study of the optical, electrophotographic and holographic parameters of As-Se condensates from the prehistory of the original bulk materials are presented. It has been established that the electrophotographic parameters of freshly deposited As40Se60 layers change significantly with temperature; the dependences of the maximum charging potential (U0) and the half-decay time of the potential (τ1/2) of electrophotographic As40Se60 layers in the dark on the processing temperature of the melt of the starting material are shown. The dependence of the half-life of the potential in the dark, as well as the properties of bulk samples, has an extremum in the region of Tsub~500°C. The correlation between the dependences of the properties of bulk samples and the electrophotographic parameters of the layers on Tsub indicates that the structural features of the source material in the deposition mode used affect the structure of the films.

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