Работы, цитирующие эту работу

Работ: 3

Работа: Efficient effect of deep levels on the photoelectric properties of a heterostructure based on p CdTe – n CdS and p CdTe – n CdSe

1. Creation of an optical sensor based on the pCdTe – nCdS and pCdTe – nCdSe heterostructure for detecting polluted air

   Salim Otajonov, Ravshanbek Ergashev, Zokir Xaydarov +4

   СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.008521

2. Influence of radiation defects on the photoelectric properties of polycrystalline CDTE films with deep impurity levels

   Sherzod Sh. Abdullayev, Salim Otajonov, Nodir Alimov

   СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.009002

3. Study of photodetectors in optical sensors based on wide-bandgap heterostructures pCdTe-nCdS and pCdTe-nCdSe

   Salim Otajonov, Ravshanbek Ergashev, Zokir Xaydarov +4

   СтатьяAdvanced Semiconductor Detectors and MaterialsAIP conference proceedings2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.007409